Hasta La Gadget!

A group of MIT researchers (we assume they’re all Philip K. Dick fans) have successfully implanted false memories in the minds of mice, according to a study published in the journal Science. This “mouseception” experiment was designed to examine the phenomenon called false memory syndrome, in which the brain concocts recollections of events that have never happened. By manipulating the memory engram-bearing cells in the hippocampus, the research team convinced a few unsuspecting mice that they had experienced a shock to their feet when one had never actually occurred. One can only assume that after finessing this false memory implantation, the next logical step is going into the mice’s dreams and stealing all their secrets. Christopher Nolan would be so proud. Or horrified. Jury’s still out.

Filed under: Science, Alt

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Via: MIT Technology Review

Source: Science

We hope you weren’t just getting used to having 2GB of RAM in a smartphone, because Samsung is already moving on. The company is now mass-producing 3GB LPDDR3 packages whose 0.8mm (0.03in) thickness can accommodate most device sizes. The capacious, 20nm-class memory should also be quick when there’s a pair of symmetric channels to keep data flowing. The first smartphones with 3GB of RAM should ship in the second half of the year; Samsung isn’t revealing which phones will have the honor, but it’s not hard to make some educated guesses.

Filed under: Storage, Mobile, Samsung

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Source: Samsung

It’s been a while since I featured a product from Brando, and I have to say I’m slightly disappointed with what they recently showed to us. It’s a USB drive shaped like a king chess piece. I know right? A perfectly reasonable, gift ready gadget that doesn’t make you want to bash your head against the wall in confusion? What’s going on at Brando?

The only weird thing about it it’s that Brando calls it a Chess Flash Drive. And it’s not even that weird! They just accidentally a word.

If you’re looking for a gift for a chess fan, get this from Brando. It sells for $16 to $38 (USD) depending on the capacity you want. Meanwhile I’ll be here mourning the end of an era.

Panasonic is releasing a micro SDHC memory card (4GB, 8GB, 16GB and 32GB) with 6 “Proof” performances: waterproof, static electrical resistance, magnetic resistance, X-ray resistance, and heat resistance on July 13.

It also has “fuse” function that protects the device from heat and fire generation if the micro SDHC memory card happens to generate anomalous heat.

The microSD card’s new standard “UHS-I (Ultra High Speed-I)” allows this product to reach to a fast transfer rate: Read 45MB/s, Write 12MB/s

Price: Open price

Samsung has already pressing ahead with its own high-density 20nm LPDDR3 modules, but SK Hynix reckons it can go one better. Instead of the stingy, piffling, retro 2GB stack offered by Sammy (pah!), the Korean memory specialist says it’s sampling 20nm 8Gb (1GB) chips that can be stacked to provide 4GB of RAM in high-end mobile devices. This memory will come with all the trimmings and trappings of high-density LPDDR3, including a data transmission speed of 2,133Mbps (vs. 1,600Mbps offered by existing LPDDR3 phones like the GS4), a thinner profile and less power consumption in standby mode compared to LPDDR2. That just leaves the question of “when?,” to which SK Hynix confusingly answers that we’ll see products “noticeably loaded” with more than 2GB of LPDDR3 during the second half of this year, although it doesn’t intend to start mass production of this exact chip until the end of the year. Of course, there’ll come a point in 2014 when even mid-range processors like ARM’s Cortex-A12 will theoretically be able to address more than 4GB, so that amount of RAM may not even seem so outlandish.

Filed under: Cellphones, Tablets, Mobile

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