Macronix plans to heat up flash memory to keep it from burning out

Macronix plans to heat up flash memory to keep it from burning out

Despite the looming threat of being replaced by phase-change memory, contemporary memory modules aren’t quite ready to be shown the door — engineers at Macronix have found a way to revive spent NAND flash cells. Most flash modules fail after being written to and erased about 10,000 times, but Macronix found that the tired memory could be restored by baking it for extended periods of time. The team funneled the time consuming and cumbersome solution into a more practical package: a redesigned memory chip that packs onboard heaters. The new modules are designed to periodically heat focused groups of memory cells to 800 °C (1,472 °F) for a few milliseconds, effectively “healing” worn cells.

Researchers found that heated chips could tolerate more than 100 million write/erase cycles and erased faster at higher temperatures. The team said the power drain of the heaters shouldn’t effect battery life, either — chips don’t have to be heated often, and when they do, it can be done while prospective devices are recharging. Macronix will be presenting the technology at the IEEE International Electron Devices Meeting next week, but project deputy director Hans-Ting Lue wouldn’t say when the company plans on taking the technology to market. Lue was willing to speculate on what might become of it, however. “This may evolve into a ‘thermally assisted’ mode of operation that gives both better performance — such as the faster erasing — and better endurance flash memory.” Faster, more reliable, super-heated memory. Sounds fine by us.

[Image credit: Emily Cooper, IEEE]

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Via: PhysOrg

Source: IEEE

Samsung creates F2FS file system for NAND flash storage, submits it to the Linux kernel

Samsung creates F2FS file system for NAND flash storage, submits it to the Linux kernel

Has the lack of NAND flash storage-optimized file systems been bugging you? Then you’ve got something in common with Samsung, which has developed F2FS (or “Flash-Friendly File-System”) for the memory of choice for mobile devices and its specific “internal geometry.” It’s based on a log-structured method, but tackles problems associated with older file systems intended mainly for retro, spinning-disk storage. The company isn’t keeping its hard work behind lock-and-patent either — it’s gone open-source and submitted the file system to the Linux kernel, meaning you could see it implemented in Android hardware of the future. It’s nice to see Sammy contributing code for the greater good, and if you’ve got the skills to understand it, a low-down of F2FS is available at the source below.

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Samsung creates F2FS file system for NAND flash storage, submits it to the Linux kernel originally appeared on Engadget on Mon, 08 Oct 2012 11:43:00 EDT. Please see our terms for use of feeds.

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Samsung SSD 840 Pro caters to speed seekers with faster random access

Samsung SSD 840 Pro caters to speed seekers with 100,000IOPS, faster writes

It’s difficult to thrive in the solid-state drive world. Unless you’ve got just the right controller and flash memory, most performance-minded PC users will rarely give you a second glance. Samsung muscled its way into that narrow view with the SSD 830 last year; it intends to lock our attention with the new SSD 840 and SSD 840 Pro. The Pro’s 520MB/s and 450MB/s sequential read and write speeds are only modest bumps over the 830, but they don’t tell the whole story of just how fast it gets. The upgraded MDX controller boosts the random read access to a nicely rounded 100,000IOPS, and random writes have more than doubled to 78,000IOPS or 90,000IOPS, depending on who you ask and what drive you use. The improved performance in either direction is a useful boost to on-the-ground performance, as both AnandTech and Storage Review will tell you. We’re waiting on details of the ordinary triple level cell-based 840 model beyond its 120GB, 250GB and 500GB capacities, although there won’t be an enormous premium for the multi-level cell 840 Pro over existing drives when it arrives in mid-October — the flagship line should start at $100 for a basic 64GB drive, and peak at $600 for the ultimate 512GB version.

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Samsung SSD 840 Pro caters to speed seekers with faster random access originally appeared on Engadget on Mon, 24 Sep 2012 21:16:00 EDT. Please see our terms for use of feeds.

Permalink AnandTech, Storage Review  |  sourceSamsung Tomorrow  | Email this | Comments

Samsung starts mass-producing 4x faster mobile flash memory, kickstarts our phones and tablets

Samsung starts massproducing 4x faster mobile flash memory, kickstarts our phones and tablets

Samsung isn’t content to leave fast NAND flash memory to traditional solid-state drives. Its Pro Class 1500 promises a big jolt to the performance of frequently pokey smartphone and tablet storage. By how much? That name is a clue — it reaches 1,500 IOPS (inputs/outputs per second) when writing data, which along with 3,500 IOPS data reads is about four times faster than any previous embedded flash chip Samsung has tested. In the real world, that leads to as much as 140MB/s when reading data and 50MB/s for writes. The speed comes after Samsung has thrown virtually every trick in the book at its new chips, including a dense 20-nanometer manufacturing process, quick toggle DDR 2.0 memory with its own controller and a new JEDEC memory standard with 200MB/s of bandwidth to spare. Samsung hasn’t named customers for the 16GB, 32GB and 64GB parts that are rolling out of the factories, although we’d do well to remember that a flourishing phone business doesn’t guarantee that the only major customer is Samsung itself: even in the face of legal challenges, Samsung still has at least one noteworthy client that tends to snap up much of its flash supply.

Continue reading Samsung starts mass-producing 4x faster mobile flash memory, kickstarts our phones and tablets

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Samsung starts mass-producing 4x faster mobile flash memory, kickstarts our phones and tablets originally appeared on Engadget on Thu, 02 Aug 2012 01:18:00 EDT. Please see our terms for use of feeds.

Permalink   |  sourceSamsung Tomorrow  | Email this | Comments