New phase-change memory gets boost from carbon nanotubes, puts PRAM claims to shame

We’ve been hearing about the potential flash killer for years, and now a team of University of Illinois engineers is claiming that its new phase-change technology could make the PRAM of our dreams look quaint by comparison. Like so many groundbreaking discoveries of late, carbon nanotubes are at the heart of the this new mode of memory, which uses 100x less power than its phase-change predecessors. So, how does it work? Basically, the team replaced metal wires with carbon nanotubes to pump electricity through phase-change bits, reducing the size of the conductor and the amount of energy consumed. Still too much technobabble? How ’bout this — they’re using tiny tubes to give your cellphone juice for days. Get it? Good.

[Thanks, Jeff]

New phase-change memory gets boost from carbon nanotubes, puts PRAM claims to shame originally appeared on Engadget on Sat, 12 Mar 2011 15:22:00 EDT. Please see our terms for use of feeds.

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Enzyme found to make fading memories fresher, old wounds painful again

There’s something of a saying that you can only remember the things you try to forget, but if you’d prefer to hang on to those photographic moments from Thunder Mountain back in 1991, a gaggle of gurus from the Weizmann Institute of Science just might have the magic elixir you’ve been yearning for. According to a newly published study on long-term memory revitalization, Reut Shema and colleagues found that boosting the amount of PKMzeta could potentially help one recall memories that were on the brink of being forgotten. In testing, lowering the levels of PKMzeta caused rats to lose track of memories more quickly, but the zany part is that boosting levels on a specific day helped animals recall memories from days prior — days where they weren’t having PKMzeta jacked into their system. Heaven help our legal system should this ever get FDA approval for use in humans.

Enzyme found to make fading memories fresher, old wounds painful again originally appeared on Engadget on Mon, 07 Mar 2011 11:53:00 EDT. Please see our terms for use of feeds.

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Seagate ships 7,200RPM 3TB Barracuda XT internal hard drive, we wonder what took so long

We’ve been hearing about Seagate’s plans to offer an unencumbered 3TB hard drive since May of last year, but despite promises of a 2010 launch and the release of similarly large HDDs from companies like Western Digital and Hitachi, we’re only now seeing the 3TB Barracuda XT shipping all on its own. We won’t claim to have an explanation for the delay, but it’s possible that the company’s proprietary software — which breaks the 2.1TB legacy OS barrier and enables this guy to function within Windows XP — could have something to do with it. It might be tardy to the party, but the new Barracuda can definitely hold its own when stacked against the competition — it spins at 7,200RPM, touts a 64MB cache, and plays nice with the 6Gbps SATA interface. It ain’t the only 3TB fish in the sea, but at $280, it’s definitely not dead in the water.

Seagate ships 7,200RPM 3TB Barracuda XT internal hard drive, we wonder what took so long originally appeared on Engadget on Sat, 05 Mar 2011 19:01:00 EDT. Please see our terms for use of feeds.

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Super Talent debuts CoreStore MV, super small, super fast mini PCIe SSD

Super Talent is living up to its name today with the release of the world’s “smallest and fastest” mini PCIe SSD. When we last took a look at the company’s mini PCIe offerings, they were rocking 40MBps reads and 15MBps writes, but with the release of the new CoreStore SSD line, these exceptional storage makers have destroyed those 2009 specs with speeds topping out at 350MBps and 80MBps. The speedy CoreStore MV measures a mere 30mm x 50.95mm, combines Marvell’s latest controller with DDR ONFi 2 flash, and is compatible with netbooks, notebooks, and other devices sporting a second gen mini-PCIe slot. Those devices working a standard PCIe slot can expect 350MBps reads and 220MBps writes with MV’s big brother, the CoreStore MP. Both drives come in 16GB, 32GB, or 64GB and should be available starting next month at an undisclosed price — though we figure true speed freaks will pay just about anything to get their fix. Jonesing for specs? Check out the source link below.

Super Talent debuts CoreStore MV, super small, super fast mini PCIe SSD originally appeared on Engadget on Wed, 23 Feb 2011 09:05:00 EDT. Please see our terms for use of feeds.

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Samsung develops mobile DRAM capable of 12.8GB/sec data transfers, making all other memory jealous

Much like clockwork, Samsung’s memory labs are cranking out yet another innovation in the mobile DRAM sector, with the goal being to make the next (next) generation Galaxy Tab — and any other mobile device relying on Samsung memory — faster than ever. This go ’round, the crew has developed a 1Gb mobile DRAM module with a wide I/O interface for smartphones and tablets, enabling it to transmit data at 12.8GB/sec. For those keeping count, that’s an eightfold increase in bandwidth compared to LPDDR2 DRAM chips, and the company has also managed to trim power consumption by 87 percent all the while. In order to boost the data transfer rate, Samsung’s new wide I/O DRAM uses 512 pins for input and output, dwarfing the 32 pins used in the previous generation. Following this, Sammy’s hoping to provide 20nm-class 4Gb wide I/O mobile DRAM sometime in 2013, but we’re hoping to see this particular development sashay into tablets that hit the market long before then. Sadly, there’s no specific word on when, but you know we’ll be handing that information over just as soon as we get it.

Continue reading Samsung develops mobile DRAM capable of 12.8GB/sec data transfers, making all other memory jealous

Samsung develops mobile DRAM capable of 12.8GB/sec data transfers, making all other memory jealous originally appeared on Engadget on Tue, 22 Feb 2011 05:15:00 EDT. Please see our terms for use of feeds.

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Sandy Bridge memory performance tested, value of expensive top-shelf memory questioned

Sandy Bridge memory performance tested, value of expensive top-shelf memory questioned

Intel’s Sandy Bridge chipset hasn’t exactly had a flawless launch, but let’s move past that and take a look at how well it performs before it starts breaking. One of the improvements here is meant to be better memory performance, and The Tech Report ran a variety of sticks through the gamut to see what the benefits of high-cost, high-speed memory is versus the cheaper stuff. The results showed that, in the vast majority of cases, DDR3-1333MHz memory was barely outclassed by the DDR3-2133MHz stuff, exhibiting only a modest improvement in games, just a couple FPS at most. Lesson learned? Save your pennies — or go ahead and spend ’em elsewhere, like that new Thermaltake case.

Sandy Bridge memory performance tested, value of expensive top-shelf memory questioned originally appeared on Engadget on Fri, 11 Feb 2011 13:57:00 EDT. Please see our terms for use of feeds.

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New research suggests our brains delete information at an ‘extraordinarily high’ rate

The mysteries of the brain may be virtually endless, but a team of researchers from two institutes in Göttingen, Germany now claim to have an answer for at least one question that has remained a puzzle: just how fast does the brain forget information? According to the new model of brain activity that the researchers have devised, the answer to that is one bit per active neuron per second. As Fred Wolf of the Max Planck Institute for Dynamics and Self-Organization further explains, that “extraordinarily high deletion rate came as a huge surprise,” and it effectively means that information is lost in the brain as quickly as it can be delivered — something the researchers say has “fundamental consequences for our understanding of the neural code of the cerebral cortex.”

Continue reading New research suggests our brains delete information at an ‘extraordinarily high’ rate

New research suggests our brains delete information at an ‘extraordinarily high’ rate originally appeared on Engadget on Fri, 28 Jan 2011 09:45:00 EDT. Please see our terms for use of feeds.

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Scientists build double-floating-gate FET, believe it could revolutionize computer memory

Look, we get it, you want DRAM that behaves like flash, flash that behaves like DRAM, and everything in between — speedy computer memory that doesn’t lose its data when the power goes off, and lasts for years on end. Well, it looks there’s a new challenger about to enter that ring — double floating-gate field effect transistors, currently in prototype form at North Carolina State University. Whereas the single floating-gate variety is currently responsible for the flash memory in your USB keys and SSDs, the second floating gate lets bits of data stay in an active, ready state, but the computer can also apply a higher voltage to “freeze” them in place. Since the memory can switch between static and dynamic modes in a single cycle and the data never disappears in between, researchers imagine the new tech could lead to instant-on computers and power-saving techniques that shut down idle memory banks. That’s the consumer take, at least — find the technical deep dive at our more coverage link.

Scientists build double-floating-gate FET, believe it could revolutionize computer memory originally appeared on Engadget on Sun, 23 Jan 2011 13:20:00 EDT. Please see our terms for use of feeds.

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OCZ quits DRAM business to focus on super-speedy SSDs

OCZ, a company that started life a decade ago by churning out DRAM modules for enthusiasts to throw into their towering rigs, has now announced it’s abandoning that market entirely. As PC Perspective points out, it’s grown increasingly difficult for companies to differentiate their products when it comes to memory — most of it just works and most of it is pretty fast — and continually declining prices have apparently forced OCZ’s hand. The San Jose-based company’s new primary breadwinner will be solid state drives, which already account for a substantial proportion of revenues and look set to grow exponentially as their own prices dip a little further into the range of the affordable. It’s a shame we’ll no longer have that bold Z to look at when picking out memory sticks for our next self-built machine, but maybe it’s all for the best. Check out an interview with an OCZ VP at the source link below.

Continue reading OCZ quits DRAM business to focus on super-speedy SSDs

OCZ quits DRAM business to focus on super-speedy SSDs originally appeared on Engadget on Thu, 13 Jan 2011 01:05:00 EDT. Please see our terms for use of feeds.

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Lexar unveils 32GB Class 10 microSDHC card, quick-fingered Android users celebrate

Lexar. It’s Where Memory Matters. And it’s also the only game in town to introduce a Class 10 microSDHC card. For those currently using an Android phone with a user-accessible microSD slot, you’ve probably gritted your teeth on a number of occasions waiting for your current Class 2 or Class 4 card to catch up with your demands. It’s one of the downfalls to removable storage, but thankfully, the device you see above looks to us like a glistening solution. The 32GB Class 10 microSDHC card promises a minimum sustained write speed of 10MB per second and a read speed of nearly 20MB per second, which should all but eliminate any lag from loading up your favorite playlist. Lexar plans on shipping this guy with preloaded software to manage and sync stored images and videos, and speaking of shipping, it should be available right now on Amazon for $149.99.

Continue reading Lexar unveils 32GB Class 10 microSDHC card, quick-fingered Android users celebrate

Lexar unveils 32GB Class 10 microSDHC card, quick-fingered Android users celebrate originally appeared on Engadget on Wed, 05 Jan 2011 09:00:00 EDT. Please see our terms for use of feeds.

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