Apr 08
SK Hynix has announced a new high-density memory module that it claims to be the world’s first to hit 128GB. The module uses 8Gb DDR4 and is built on advanced … Continue reading
Mar 13
One ways that some people save money when they order a computer from Apple is to buy the machine with the smallest amount of RAM possible. Often RAM upgrades are … Continue reading
Jan 01
Samsung has already chalked up plenty of feathers in its proverbial hat, and this time around, they have yet another one to add to their burgeoning collection. The company is already a world leader when it comes to consumer electronics, and this time around, they have announced the first 8Gb LPDDR4 (low power double data rate) mobile DRAM in the world which will (fingers crossed) usher in the next-generation of ultra-fast mobile memory in order to meet ever growing market demand. Just how will this particular advancement change the way we use mobile electronics for the better? Read on after the jump to find out.
The all new high-speed 8Gb LPDDR4 mobile DRAM is touted to deliver the highest level of density, performance and energy efficiency for mobile memory applications, so that end users will be able to enjoy faster, more responsive applications, additional advanced features, and higher resolution displays, all without draining one’s battery life in a short amount of time.
The 8Gb LPDDR4 will be fabricated on 20-nanometer (nm) class process technology, where one is able to obtain up to 1 gigabyte (GB) of storage space on a single die, making it the largest density available for DRAM components in the market at the moment. A quartet of the 8Gb chips will see a single 4GB LPDDR4 package such as this offer the highest level of performance that can be found.
Not only that, Samsung’s latest 8Gb LPDDR4 will also utilize a Low Voltage Swing Terminated Logic (LVSTL) I/O interface that was originally meant to be the standard specification for LPDDR4 DRAM as proposed by Samsung to JEDEC. We are looking at a data transfer rate per pin of 3,200 megabits per second (Mbps), which is double the amount of the 20nm-class LPDDR3 DRAM that is currently being mass produced. In a nutshell, the new LPDDR4 interface offers up to 50% additional performance compared to the fastest LPDDR3 or DDR3 memory, all the while consuming around 40% less energy at 1.1 volts. When will the first generation of smartphones feature such memory? Only time will tell, and we await with bated breath.
Press Release
[ Samsung rolls out world’s first 8Gb LPDDR4 Mobile DRAM copyright by Coolest Gadgets ]
Dec 30
There’s an inherent trade-off when designing a phone, between pure power and respectable battery life. Fortunately, Samsung’s latest memory chips are so efficient that they could make 4GB of RAM in phones an industry standard—and make 4K phones a very real thing indeed.
     |
Dec 30
Samsung and other smartphone makers are always out to improve the performance of their smartphones. One of the ways to help boost the performance of the smartphone is to cram … Continue reading
Nov 27
OCZ dropped off the radar shortly into 2013 as it struggled to correct dodgy accounting and stem ongoing losses. Unfortunately, it couldn’t turn things around quickly enough — the one-time legend in memory technology has declared bankruptcy. That isn’t necessarily the end of the story, though. Toshiba has offered to buy all of OCZ’s assets as long as the ailing company maintains its value. The bankruptcy represents a sad (potential) end for a firm that was once synonymous with speedy RAM and SSDs, but there’s a good chance that its work will live on in future products.
Filed under: Storage
Source: OCZ
Sep 24
Manufacturers and consumers alike better brace themselves: memory chip prices have hit a two-year high because of a major fire in a massive Chinese production plant.
| |
Aug 30
Samsung’s cranking out DDR4 memory for faster, more efficient servers (updated)
Posted in: Today's Chili
DDR4 memory is finally in mass production, as Samsung Semiconductor announced it’s churning out 4GB 4Gb (512MB) modules, based on “20nm-class” process technology. 32GB sticks like the ones shown above are headed for the premium server market, where Samsung claims their higher speeds (up to 2,667 Mb/s) make for higher performance and 30 percent less power consumption than DDR3. The company claims this is the world’s smallest and highest performing 4Gb RAM chip, and we expect it won’t stop there — when Samsung showcased the technology in 2011 it claimed speeds could eventually reach as high as 4Gbps.
Update: It’s four gigabits, not gigabytes — thanks for the corrections, everyone.
Filed under: Peripherals, Samsung
Aug 06
There’s never a shortage of new experimental forms of memory—but a company called Crossbar has now worked up something called resistive RAM which could wipe the floor with NAND.
| |
Aug 06
Crossbar’s RRAM to boast terabytes of storage, faster write speeds than NAND
Posted in: Today's Chili
Hardware makers often sing the praises of their latest and greatest flash memory, but the folks at Crossbar are ready to show them up with resistive RAM (RRAM) that they’ve been quietly working on. Compared to NAND, RRAM comes in at half the size and boasts 20 times faster write speeds (140MB/s), reads data at 17MB per second, guzzles 20 times less power and has 10 times more endurance. Since RRAM is non-volatile memory, it can keep data even when it’s powered off, á la NAND. As if that weren’t enough, 3D stacking construction allows for several terabytes of storage, endowing one 200 x 200mm 200mm2 chip with one terabyte.
Unlike many tech breakthroughs however — we’re looking at you, graphene — this one is just about ready to find its way into finished products. Crossbar has manufactured RRAM within a standard chip factory, and claims that it can be churned out easily with existing production infrastructure. According to the firm, it’s in the fine-tuning process and plans to introduce the tech into the world of embedded SoCs. Sure, the outfit is the exclusive holder of some RRAM patents, but it aims to license its know-how to system-on-a-chip creators.
Update: Thanks to those readers who spotted our error on the silicon area — it’s now been fixed.
Filed under: Storage
Via: VentureBeat
Source: Crossbar
Who's in charge here?
This is site is run by Sascha Endlicher, M.A., during ungodly late night hours. Wanna know more about him? Connect via Social Media by jumping to about.me/sascha.endlicher.